Ge<sub>1−x </sub>Sn <sub>x</sub> nanodots crystal nuclei for solid phase crystallization of poly-Si<sub>1−x−y </sub>Ge <sub>x</sub> Sn <sub>y</sub>
نویسندگان
چکیده
Abstract Solid phase crystallization of polycrystalline Si 1− x − y Ge Sn using nanodots (Ge -ND) as crystal nuclei was examined. The effects the substrate temperature and ratio deposited on dot size, coverage, substitutional content in -ND were investigated. Lowering deposition increased coverage -ND. Crystallization confirmed at 150 °C. higher when with contents poly-Si layer estimated to be high 36.3% 4.2%, respectively, after annealing 225 °C for 30 min.
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2022
ISSN: ['0021-4922', '1347-4065']
DOI: https://doi.org/10.35848/1347-4065/aca20e